High voltage semiconductor device utilizing a deep trench...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S501000, C257S506000, C257SE29007, C257SE29020, C257SE21545

Reexamination Certificate

active

07129559

ABSTRACT:
A semiconductor device includes a substrate having a source, a drain, and a gate between the source and the drain. Both the source and the drain include a first edge, and the gate includes a first portion. A first deep trench structure is situated under the first portion of the gate and proximate to the first edge of the source and the first edge of the drain.

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