High-voltage semiconductor device structure

Details High-voltage semiconductor device structure High-voltage semiconductor device structure

2006-12-15

2009-02-24

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C438S140000

Reexamination Certificate

active

07495286

ABSTRACT:
A high-voltage semiconductor device structure is provided, which includes a drain structure having two curved structures that are insulatedly adjacent to each other and alternatively arranged, and a source structure, a drain extension structure, and a gate structure formed between the two curved structures. By using the curved structures with alternatively arranged configuration, an electrode terminal with a small curvature radius is prevented from being produced, and the electric field accumulation effect is partially eliminated, thereby increasing the breakdown voltage. Meanwhile, the curved structure with alternatively arranged configuration not only reduces the ON resistance, but also utilizes the space effectively, thus, the integration of the semiconductor device on the chip is enhanced, so that the miniaturization requirement of an electronic device is satisfied.

REFERENCES:
patent: 6133591 (2000-10-01), Letavic et al.
patent: 6593621 (2003-07-01), Tsuchiko et al.

Affiliated with

Also associated with

Rating

High-voltage semiconductor device structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-voltage semiconductor device structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage semiconductor device structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4079288