High-voltage semiconductor device including a floating block

Details High-voltage semiconductor device including a floating block High-voltage semiconductor device including a floating block

2006-01-24

2006-01-24

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S409000, C257S487000

Reexamination Certificate

active

06989566

ABSTRACT:
A high-voltage semiconductor device includes: a semiconductor region; a doped contact region; an isolating region; a metal electrode which is electrically connected with the doped contact region; and floating plate electrodes. A section of the metal electrode is extended onto an interlayer dielectric film and located over the respective plate electrodes. The extended section is capacitively coupled to the plate electrodes, respectively. A CMOS circuit, a resistor, a capacitor are formed in a portion of the semiconductor region which is surrounded with the doped contact region.

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Specifications and Drawings for patent application Ser. No. 09/736,230, “High-Voltage Semiconductor Device” Inventors: Masaaki Noda et al.

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