High voltage semiconductor device having improved electrical rug

Details High voltage semiconductor device having improved electrical rug High voltage semiconductor device having improved electrical rug

1995-06-27

1996-07-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257339, H01L 3300, H01L 2978

Patent

active

055414290

ABSTRACT:
A high voltage semiconductor device having improved electrical raggedness and reduced cell pitch wherein, for an N- channel device, the P+ region (22') extends to the gate contact (28) and wherein the P+ region and the N+ source region (20') overlap efficiently so that the depth of the overlap portion (24') is at least as deep as the N+ source region (20').

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Nakagawa et al., Safe Operating Area for 1200-V Nonlatchup Bipolar Mode MOSFET's, IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb., 1987, pp. 351-355.

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