High voltage semiconductor device having high breakdown...

Details High voltage semiconductor device having high breakdown... High voltage semiconductor device having high breakdown...

2006-10-31

2006-10-31

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S347000

Reexamination Certificate

active

07129542

ABSTRACT:
A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

REFERENCES:
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4725562 (1988-02-01), El-Kareh et al.
patent: 5554872 (1996-09-01), Baba et al.
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 6358785 (2002-03-01), Chittipeddi et al.

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