High voltage semiconductor device having high breakdown...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S343000, C257S347000

Reexamination Certificate

active

07129542

ABSTRACT:
A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

REFERENCES:
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4725562 (1988-02-01), El-Kareh et al.
patent: 5554872 (1996-09-01), Baba et al.
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 6358785 (2002-03-01), Chittipeddi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High voltage semiconductor device having high breakdown... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage semiconductor device having high breakdown..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage semiconductor device having high breakdown... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3627170

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.