High voltage semiconductor device having an increased...

Details High voltage semiconductor device having an increased... High voltage semiconductor device having an increased...

2006-03-28

2006-03-28

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257S502000

Reexamination Certificate

active

07019358

ABSTRACT:
A semiconductor device includes a substrate layer having a first dopant density, an epitaxial layer comprising a second dopant density formed on the substrate layer and a semiconductor switch formed on the epitaxial layer, wherein the semiconductor switch comprises an active region of the semiconductor device. A first thickness of the epitaxial layer in the active region is less than a second thickness of the epitaxial layer in a termination region formed peripherally to the active region. The increased thickness of the epitaxial layer in the termination region enables the semiconductor device to have a relatively higher breakdown voltage without increasing the on-resistance of the semiconductor switch.

REFERENCES:
patent: 5272098 (1993-12-01), Smayling et al.
patent: 5960277 (1999-09-01), Blanchard
patent: 6133606 (2000-10-01), Tung
patent: 6172398 (2001-01-01), Hshieh
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6426260 (2002-07-01), Hshieh
patent: 6518618 (2003-02-01), Fazio et al.
patent: 6576954 (2003-06-01), Madson et al.
patent: 6713813 (2004-03-01), Marchant
patent: 6784505 (2004-08-01), Zeng
patent: 6818513 (2004-11-01), Marchant
patent: 6900523 (2005-05-01), Qu
patent: 2005/0023605 (2005-02-01), Amato

Affiliated with

Also associated with

Rating

High voltage semiconductor device having an increased... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage semiconductor device having an increased..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage semiconductor device having an increased... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3553908