Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257SE29024
Reexamination Certificate
active
07868384
ABSTRACT:
A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge compensation layer of a second conductivity type is disposed over at least sidewalls of each trench to a predetermined thickness to form a groove in each trench. A charge compensation plug of the first conductivity type substantially fills each groove.
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Jang Ho-cheol
Kim Chang-Wook
Lee Jae-gil
Yun Chong-Man
Fairchild Korea Semiconductor Ltd.
Hall Jessica
Landau Matthew C
Townsend and Townsend / and Crew LLP
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