Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-13
2009-08-11
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S333000, C257S330000, C438S151000
Reexamination Certificate
active
07573100
ABSTRACT:
There is provided a high voltage semiconductor device comprising: a semiconductor substrate of a first conductivity type, including a first region, a second region relatively lower than the first region, and a sloped region between the first region and the second region; a drift region of a second conductivity type, formed on the second region; a source region of the second conductivity type, disposed on the first region, and spaced apart from the drift region by the sloped region; a drain region of the second conductivity type, disposed on the drift region; a field plate positioned on the drift region in the second region; a gate insulating layer disposed between the source region and the drift region; and a gate electrode layer, which is disposed on the gate insulating layer and extends to above the field plate.
REFERENCES:
patent: 6232636 (2001-05-01), Simpson et al.
patent: 7064385 (2006-06-01), Dudek et al.
patent: 7187033 (2007-03-01), Pendharkar
patent: 7224025 (2007-05-01), Tsai et al.
patent: 7247507 (2007-07-01), Sung
patent: 2005/0001265 (2005-01-01), Shiraki et al.
patent: 2006/0148110 (2006-07-01), Sung
Clark S. V
Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
LandOfFree
High voltage semiconductor device and method for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage semiconductor device and method for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage semiconductor device and method for fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4069350