Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-09-18
1999-11-09
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257347, 257341, H01L 2968
Patent
active
059819839
ABSTRACT:
A semiconductor device includes a substrate, an insulating layer formed on the substrate, a base layer of a first conductivity type formed on the insulating layer, a drain layer of a second conductivity type selectively formed above the surface of the base layer of the first conductivity type, a drain electrode formed on and connected to the drain layer of the second conductivity type, a base layer of the second conductivity type selectively formed on the base layer of the first conductivity type, a source layer of the first conductivity type isolated from the base layer of the first conductivity type and selectively formed in the surface area of the base layer of the second conductivity type, a source electrode formed on and connected to the source layer of the first conductivity type and the base layer of the second conductivity type, and a gate electrode formed above a portion of the base layer of the second conductivity type which lies between the source layer of the first conductivity type and the base layer of the first conductivity type with a gate insulating film disposed therebetween.
REFERENCES:
patent: 4012764 (1977-03-01), Satanaka
patent: 5321285 (1994-06-01), Lee et al.
patent: 5567976 (1996-10-01), Dierschke et al.
patent: 5629546 (1997-05-01), Wu et al.
Funaki Hideyuki
Yamaguchi Yoshihiro
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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