High voltage semiconductor device

Details High voltage semiconductor device High voltage semiconductor device

1997-06-27

1999-07-27

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257139, H01L 2974, H01L 2976, H01L 31062

Patent

active

059294841

ABSTRACT:
The present invention discloses a high voltage semiconductor device with high breakdown voltage without increment in area occupied an increase in the size of junction region. Each junction region includes: (i) a first impurity region of a first conductivity type of a low impurity concentration formed at a predetermined position in the semiconductor substrate, (ii) a second impurity region of a second conductivity type of a medium impurity concentration formed in the first impurity region, a part of the second impurity region being exposed to the surface of the substrate, and (iii) a third impurity region of a first conductivity type of a high impurity concentration, the third impurity region being in contact with the second impurity region, wherein a reverse bias is applied to the third impurity region.

REFERENCES:
patent: 4823173 (1989-04-01), Beasom
patent: 5352914 (1994-10-01), Farb
patent: 5357135 (1994-10-01), Aronowitz et al.

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