Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-27
1999-07-27
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257342, 257139, H01L 2974, H01L 2976, H01L 31062
Patent
active
059294841
ABSTRACT:
The present invention discloses a high voltage semiconductor device with high breakdown voltage without increment in area occupied an increase in the size of junction region. Each junction region includes: (i) a first impurity region of a first conductivity type of a low impurity concentration formed at a predetermined position in the semiconductor substrate, (ii) a second impurity region of a second conductivity type of a medium impurity concentration formed in the first impurity region, a part of the second impurity region being exposed to the surface of the substrate, and (iii) a third impurity region of a first conductivity type of a high impurity concentration, the third impurity region being in contact with the second impurity region, wherein a reverse bias is applied to the third impurity region.
REFERENCES:
patent: 4823173 (1989-04-01), Beasom
patent: 5352914 (1994-10-01), Farb
patent: 5357135 (1994-10-01), Aronowitz et al.
Fahmy Wael M.
Hyundai Electronics Industries Co,. Ltd.
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