High voltage semiconductor device

Details High voltage semiconductor device High voltage semiconductor device

1997-02-03

1998-04-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257338, H01L 2976, H01L 2994

Patent

active

057395721

ABSTRACT:
A high voltage semiconductor device includes a low voltage CMOSFET and a p-channel high voltage MOSFET having a drain formed in a p-well and a source in an n-well. The p-well has a bottom flush with the bottom of the n-well, and a heavily doped n-well is further provided at the bottom surface of the p-well at least a part of the bottom surface of the n-well. The high voltage MOSFET has a large rated voltage and is suited for fabrication in a finer structure.

REFERENCES:
patent: 4923824 (1990-05-01), Fertig et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5286995 (1994-02-01), Malhi
patent: 5356822 (1994-10-01), Lin et al.
S. Ghandhi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, pp. 346-348 (1983).
S. Wolf, Silicon Processing for the VLSI Era, pp. 383-386 (1990).

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