Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-18
1999-11-02
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257407, 257408, H01L 2976, H01L 2994, H01L 31062
Patent
active
059775912
ABSTRACT:
A MOS transistor capable of withstanding relatively high voltages is of a type integrated on a region included in a substrate of semiconductor material, having conductivity of a first type and comprising a channel region intermediate between a first active region of source and a second active region of drain. Both these source and drain regions have conductivity of a second type and extend from a first surface of the substrate. The transistor also has a gate which includes at least a first polysilicon layer overlying the first surface of at least the channel region, to which it is coupled capacitively through a gate oxide layer. According to the invention, the first polysilicon layer includes a mid-portion which only overlies the channel region and has a first total conductivity of the first type, and a peripheral portion with a second total conductivity differentiated from the first total conductivity. The peripheral portion partly overlies the source and drain active regions toward the channel region.
REFERENCES:
patent: 4745079 (1988-05-01), Pfiester
patent: 5279976 (1994-01-01), Hayden et al.
patent: 5418392 (1995-05-01), Tanabe
patent: 5464784 (1995-11-01), Crisenza et al.
patent: 5466958 (1995-11-01), Kakumu
Fratin Lorenzo
Riva Carlo
Loke Steven H.
SGS--Thomson Microelectronics S.r.l.
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