Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2005-03-22
2005-03-22
Brock, II, Paul E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S490000, C257S495000
Reexamination Certificate
active
06870201
ABSTRACT:
The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.
REFERENCES:
patent: 3405329 (1968-10-01), Loro et al.
patent: 4300150 (1981-11-01), Colak
patent: 4468686 (1984-08-01), Rosenthal
patent: 4573066 (1986-02-01), Whight
patent: 4609929 (1986-09-01), Jayaraman et al.
patent: 4633292 (1986-12-01), Fellinger et al.
patent: 4750028 (1988-06-01), Ludikhuize
patent: 5028548 (1991-07-01), Nguyen
patent: 5032878 (1991-07-01), Davies et al.
patent: 5347155 (1994-09-01), Ludikhuize
patent: 5521105 (1996-05-01), Hsu et al.
patent: 5610432 (1997-03-01), Ludikhuize
patent: 5883413 (1999-03-01), Ludikhuize
patent: 5930630 (1999-07-01), Hshieh et al.
patent: 5969400 (1999-10-01), Shinohe et al.
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 6236068 (2001-05-01), Feiler
patent: 667423 (1963-07-01), None
patent: 44 10 354 (1995-10-01), None
patent: 196 04 043 (1997-08-01), None
patent: 19730328 (1998-12-01), None
patent: 01-272152 (1989-10-01), None
patent: 02-142184 (1990-05-01), None
patent: 08-078662 (1996-03-01), None
Omura et al., “A breakdown voltage simulator for semiconductor devices with depleted floating regions”, NASECODE VI. Proc. 6th Intl. Conf. on Numerical Analysis of Semiconductor Devices and Integrated Circuits, Dublin, IRE, Jul. 11-14, 1989, p. 372-7.*
M. Nagata, et al., “A Planar 2500V 0.3 A Bipolar Transistor for High Voltage Control Circuit”, Proc. of 1992 Intl. Symp. on Power Semiconductor Devices and ICs, Tokyo, May 19, 1992, pp. 333-338.
Deboy Gerald
Gassel Helmut
Stengl Jens-Peer
Strack Helmut
Tihanyi Jenoe
Brock, II Paul E.
Infineon - Technologies AG
Schiff & Hardin LLP
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