High voltage random-access memory cell incorporating level shift

Details High voltage random-access memory cell incorporating level shift High voltage random-access memory cell incorporating level shift

1992-06-17

1993-08-24

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Continuous cells

365154, 36518911, G11C 1140

Patent

active

052395030

ABSTRACT:
A level-shifting static random access memory cell includes a first stage having a first P-Channel MOS transistor having its source connected to a high voltage supply rail, and its drain connected to the drain of a first N-Channel MOS transistor. The source of the first N-Channel MOS transistor is connected to the drain of a second N-Channel MOS transistor. The source of the second N-channel MOS transistor is connected to a VSS power supply rail. A second stage comprises a second P-Channel MOS transistor having its source connected to the high voltage supply rail V.sub.HS, and its drain connected to the drain of a third N-Channel MOS transistor. The source of the third N-Channel MOS transistor is connected to the drain of a fourth N-Channel MOS transistor. The source of the fourth N-channel MOS transistor is connected to VSS. The gates of the first and second P-Channel MOS transistors are cross coupled and the gates of the second and fourth N-Channel MOS transistors are cross coupled. The gates of the first and third N-channel MOS transistors are connected together to power supply rail V.sub.DD, usually 5 volts. The first and second P-channel MOS transistors are formed in an n-well biased at power supply voltage V.sub.HS. A bit line coupled to the drain of the second N-Channel MOS transistor through a fifth N-Channel MOS transistor, having its gate connected to a word line.

REFERENCES:
patent: 4287574 (1981-09-01), Uchida
patent: 4403306 (1983-09-01), Takushige et al.
patent: 4536859 (1985-08-01), Kanuro
patent: 4541073 (1985-09-01), Brice et al.
patent: 4779226 (1988-10-01), Haraszti
patent: 4816706 (1989-03-01), Dhong et al.

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