Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-11
2007-12-11
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S366000
Reexamination Certificate
active
10837086
ABSTRACT:
A high-voltage circuit protection device includes a p-n junction in a semiconductor substrate that is spaced apart from a first electrode region by a diode region. A semiconductor layer overlies the diode region and is separated therefrom by a dielectric layer. A shallow-doped region resides in the diode region spaced apart from the p-n junction by a predetermined distance. The predetermined distance preferably ranges from about 0 to about 50% of the length of the diode region. A process for fabricating the high-voltage device includes forming the shallow-doped region using a threshold adjustment mask followed by formation of the first electrode region using the semiconductor layer in a self-aligned doping process. The shallow-doped region functions to reduce the clamping voltage of the device.
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U.S. Appl. No. 10/699,321, filed Oct. 31, 2003, Logie.
Chong Nui
Omid-Zohoor Farrokh
Lattice Semiconductor Corporation
Nguyen Cuong
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