Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-10-24
2008-12-30
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29105
Reexamination Certificate
active
07470960
ABSTRACT:
A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.
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“Veröffentlichungstag” translated by Google Translate. Retrieved from http://translate.google.com/translate—t?langpair=de|en on May 28, 2007.
Hideyuki Fumino; Norio Yasuhara; Akio Nakagawa (Toshiba), High Voltage Lateral MOS, (May 20, 1996).
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N. Cezac; F. Morancho; P. Rossel; H. Tranduc; A. Peyre, New Generation of Power Unipolar(May 22, 2000).
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Arena Andrew O
Gurley Lynne
Kansai Electric Power Company, Inc
McIntyre-Lilley Intellectual Property Management Services
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