High voltage power integrated circuit with level shift operation

Details High voltage power integrated circuit with level shift operation High voltage power integrated circuit with level shift operation

1997-02-03

1998-09-01

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257379, 257380, 257370, 257373, 257408, 257536, H01L 2972

Patent

active

058014187

ABSTRACT:
Level shift devices are formed in the high voltage termination region of an integrated circuit. The level shift devices provide a connection between the higher voltage, floating circuit and a ground referenced lower voltage circuit. The structure of the level shift devices eliminates the need for a high voltage connector to cross over the low voltage connector.

REFERENCES:
patent: 5237193 (1993-08-01), Williams et al.

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