High voltage operating field effect transistor, and bias...

Details High voltage operating field effect transistor, and bias... High voltage operating field effect transistor, and bias...

2005-02-22

2008-10-07

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

07432568

ABSTRACT:
A high voltage operating field effect transistor has a substrate, a semiconductor channel formation region disposed in a surface of the substrate, a source region and a drain region which are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region, a gate insulating film region disposed on the semiconductor channel formation region, a resistive gate region disposed on the gate insulating film region, a source side electrode disposed on a source region end portion side of the resistive gate region, and a drain side electrode disposed on a drain region end portion side of the resistive gate region. A signal electric potential is supplied to the source side electrode, and a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential is supplied to the drain side electrode.

REFERENCES:
patent: 3999210 (1976-12-01), Yamada
patent: 4141023 (1979-02-01), Yamada
patent: 5208477 (1993-05-01), Kub

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