Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-07
2008-11-11
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S357000, C257S360000, C257S546000, C257SE29014
Reexamination Certificate
active
07449751
ABSTRACT:
A high voltage operating electrostatic discharge protection device is provided. The high voltage operating electrostatic discharge protection device includes: a first gate structure and a second gate structure disposed on a substrate of a first conductive type with a predetermined distance; a well of the first conductive type formed in a first region of the substrate such that the well contacts one bottom portion of the first gate structure; a source region of a second conductive type formed within in the well; a counter pocket source region of the first conductive type formed within the well encompassing the source region; and a drift region of the second conductive type contacting a bottom surface of the second gate structure and formed in a second region of the substrate such that the drift region contacts the other bottom portion of the first gate structure.
REFERENCES:
patent: 2002/0056877 (2002-05-01), Liu et al.
Blakely & Sokoloff, Taylor & Zafman
Magnachip Semiconductor Ltd.
Warren Matthew E
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