High voltage mosfet with an improved channel stopper structure

Details High voltage mosfet with an improved channel stopper structure High voltage mosfet with an improved channel stopper structure

1995-10-31

1997-06-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257399, 257400, 257652, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056419821

ABSTRACT:
The present invention provides a MOS field effect transistor comprising: a semiconductor substrate having a first conductivity type; source/drain regions of a second conductivity type; lightly doped regions covering the bottom of the source/drain regions and surrounding the source/drain regions, the lightly doped regions having the second conductivity type and a lower impurity concentration than an impurity concentration of the source/drain regions; an off-set region surrounding the lightly doped regions, the off-set region having the first conductivity type, the off-set region having a lower impurity concentration than the impurity concentration of the lightly doped regions; and a channel stopper region having the first conductivity type, the channel stopper region having a higher impurity concentration than the impurity concentration of the off-set region, the channel stopper region surrounding the off-set region, the channel stopper region having projected portions under a gate electrode, the projected portions projecting in the inward direction so that inner sides of the projected portions be in contact with the ends of a channel region defined by the lightly doped regions, and that the projected portions be in contact with the lightly doped region.

REFERENCES:
patent: 4454525 (1984-06-01), Wada et al.
patent: 4590665 (1986-05-01), Owens et al.
patent: 5192993 (1993-03-01), Arai et al.

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