High-voltage MOS transistor and corresponding manufacturing...

Details High-voltage MOS transistor and corresponding manufacturing... High-voltage MOS transistor and corresponding manufacturing...

2007-09-04

2007-09-04

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S133000, C257SE29256, C438S284000, C438S286000

Reexamination Certificate

active

11191894

ABSTRACT:
A high-voltage MOS transistor having: a first region of a first conductivity type; a source region of the second conductivity type, which is introduced into the first region; a drain region of the second conductivity type, which is introduced into the first region; a channel region on the upper side of the first region, between the source region and the drain region; a field-oxide region in the drain region, between the source region and the drain region; a gate-oxide region over the channel region and between the edge of the drain region and the field-oxide region; a magnetoresistor region between the source region and the drain region, over the gate-oxide region and over at least a part of the field-oxide region; the drain region having a drain-terminal region and a drain-extension region and the doping profile of the drain-extension region is designed so that an avalanche breakdown occurs between the source region and the drain region, in a breakdown region that is on the edge of the drain-extension region and is not situated at the upper surface. Also it describes corresponding manufacturing methods.

REFERENCES:
patent: 6236068 (2001-05-01), Feiler
Bassin et al.,High-Voltage Device for 0.5-μm Standard CMOS Technology, IEEE Electron Device Letters, vol. 21, No. 1, Jan. 2000, pp. 40-42.

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