High-voltage MOS transistor

Details High-voltage MOS transistor High-voltage MOS transistor

2005-12-13

2005-12-13

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S335000, C257S336000

Reexamination Certificate

active

06974997

ABSTRACT:
A high-voltage MOS transistor capable of lowering the maximum substrate current without sacrificing the driving capacity of the transistor itself, and ensuring an acceptable lifetime of hot carriers is provided. By providing an overlapping region in a boundary region between a gate electrode and a lightly doped n-type diffusion layer of a drain electrode, it becomes possible to increase by about 50% a dopant dose of the lightly doped n-type diffusion layer, having effects on the so-called transistor characteristic of the n-channel high-voltage MOS transistor described above. Furthermore, by setting an overlapping amount to not less than 0.5 μm, it becomes possible to create a stable region with maximum substrate current (Isub max.) at not larger than 5 μA/μm.

REFERENCES:
patent: 5034791 (1991-07-01), Kameyama et al.
patent: 6084283 (2000-07-01), Arai

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