High voltage MOS transistor

Details High voltage MOS transistor High voltage MOS transistor

1993-11-09

1996-04-23

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257408, H01L 27092

Patent

active

055106439

ABSTRACT:
A semiconductor device having a high voltage MOS transistor comprise a first conductivity type semiconductor substrate; a second conductivity type tub formed in the first conductivity type semiconductor substrate; first conductivity type source/drain regions formed in the second conductivity type tub; and first conductivity type drift layers connected with either of the first conductivity type source/drain regions; wherein the second conductivity type tub has slit portions having a low impurity concentration in the neighborhood of the first conductivity type drift layer, whose impurity concentration is at the same level to that of the inside of the second conductivity type tub.

REFERENCES:
patent: 4819045 (1989-04-01), Murakami
patent: 4990982 (1991-02-01), Omoto et al.

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