High-voltage module and method for producing same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Encapsulating

Reexamination Certificate

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Details

C257SE23116

Reexamination Certificate

active

07407836

ABSTRACT:
The invention relates to a high-voltage module comprising a housing (9) which accommodates at least one structural component (4, 5) that is fastened on a metal-ceramics substrate from a ceramic layer (1) comprising a first main face (11) and a second main face (12) opposite said first main face (11), an upper metal layer (15) on the first main face (11) and a lower metal layer (16) on the second main face (12). The high-voltage module is further characterized by comprising on the outer edges (14) of the substrate either a cast from weakly conductive particles (17) and a gel, or a cast from particles having a high dielectric constant as compared to the cast gel (17), and a gel.

REFERENCES:
patent: 5294374 (1994-03-01), Martinez et al.
patent: 5580493 (1996-12-01), Chu et al.
patent: 5641997 (1997-06-01), Ohta et al.
patent: 6201696 (2001-03-01), Shimizu et al.
patent: 199 58 915 (2000-06-01), None
patent: 0 308 676 (1988-08-01), None
patent: 0 921 565 (1999-06-01), None
patent: 0 962 974 (1999-12-01), None
patent: 99/24992 (1999-05-01), None
patent: WO 99/24992 (1999-05-01), None
patent: WO 00/08686 (2000-02-01), None

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