High voltage MIS transistor and semiconductor device

Details High voltage MIS transistor and semiconductor device High voltage MIS transistor and semiconductor device

1993-10-18

1995-07-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257577, 257146, 257140, H01L 2972, H01L 2908

Patent

active

054364868

ABSTRACT:
A high voltage MIS transistor includes a well region of a second conduction type formed by a step of injecting ions from the surface side of a semiconductor substrate of a first conduction type and a thermal diffusion step after the ion injecting step; an MIS part including a base layer of a first conduction type formed in one end portion of the well region, a base contact layer of a first conduction type which is formed in the base layer of a first conduction type and to which an emitter potential is applied, and a gate electrode provided so as to extend from an emitter layer of a second conduction type to the well region through an insulation gate film; and, a collector part including a base layer of a second conduction type formed in the other end portion of the well region, a collector layer of a first conduction type formed in the base layer of a second conduction type, and a high concentration contact layer of a first conduction type which is formed in the collector layer and to which a collector potential is applied.

REFERENCES:
patent: 3609413 (1971-09-01), Lane et al.
"A CMOS-Compatible High-Voltage IC Process", Parpia et al., IEEE Transactions On Electron Devices, vol. 35, No. 10, pp. 1687-1694, Oct. 1988.
"Two Types of 500V Double Gate Lateral N-ch Bipolar-Mode MOSFETs in Dielectrically Isolated P- and N-Silicon Islands", Nakagawa et al., IEEE, IEDM 88, pp. 817-820, 1988.
"New Anode Structure for High Voltage Lateral IGBTs", Yamaguchi et al., Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, pp. 677-680, 1990.

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