High voltage laterally double-diffused metal oxide...

Details High voltage laterally double-diffused metal oxide... High voltage laterally double-diffused metal oxide...

2006-09-19

2006-09-19

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

C257S335000, C257S342000, C257S341000, C257SE29009, C257SE29010, C257SE29256, C257SE29261

Reexamination Certificate

active

07109562

ABSTRACT:
A high voltage laterally double-diffused metal oxide semiconductor (LDMOS) stricture is characterized as follows: the second source electrode metal layer connected to the first source electrode metal layer protrudes out of a certain length relative to the first source electrode metal layer of the source electrode region connected thereto. The second drain electrode metal layer connected to the first drain electrode metal layer protrudes out of a certain length relative to the first drain electrode metal layer of the drain electrode region. The protruded length overlaps more portions of the drift layer than the first source electrode metal layer and the first drain electrode metal layer disposed below, to reduce the electric field concentration of the gate electrode interface or the interface between the N+ type drain electrode layer and the N-type extended drift layer.

REFERENCES:
patent: 4614959 (1986-09-01), Nakagawa
patent: 5304827 (1994-04-01), Malhi et al.
patent: 5432370 (1995-07-01), Kitamura et al.
patent: 6110804 (2000-08-01), Parthasarathy et al.
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 6211552 (2001-04-01), Efland et al.
patent: 6252279 (2001-06-01), Kim
patent: 6614088 (2003-09-01), Beasom
patent: 6825531 (2004-11-01), Mallikarjunaswamy
patent: 2004/0195644 (2004-10-01), Mallikarjunaswamy et al.
patent: 2004/0201078 (2004-10-01), Ren

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