High voltage integrated flyback circuit in 2 .mu.m CMOS

Details High voltage integrated flyback circuit in 2 .mu.m CMOS High voltage integrated flyback circuit in 2 .mu.m CMOS

1993-01-04

1994-07-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257577, 257557, 257566, 257362, H01L 2702, H01L 2972

Patent

active

053291476

ABSTRACT:
When a field effect transistor is used to control the current through an inductive load, the flyback voltage is felt through the vertical pnp transistor at the drain, which onducts to the substrate. This current represents a power loss and a source of heat. This invention supplies a second lateral transistor which conducts this current back to the power supply.

REFERENCES:
patent: 5118635 (1992-06-01), Frisina et al.
patent: 5146298 (1992-09-01), Eklund

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