High-voltage integrated CMOS circuit

Details High-voltage integrated CMOS circuit High-voltage integrated CMOS circuit

2006-03-14

2006-03-14

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S376000, C257S409000

Reexamination Certificate

active

07012309

ABSTRACT:
The invention relates to an integrated CMOS circuit comprising, in a semiconductor substrate (1) with a first type of conductivity, a casing (2) of a second type of retrograde-doped conductivity, the end of said casing being covered by an inter-casing insulating region (4). The components contained in said casing are separated from each other by means of intra-casing insulating regions (6,7). The first insulating elements (15) of the second type of high-level doping conductivity extend under each intra-casing insulating region. A second region (21) of the second type of high-level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing.

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