High voltage integrated circuit

Details High voltage integrated circuit High voltage integrated circuit

1997-12-24

1999-10-26

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257544, 257547, H01L 2701

Patent

active

059733667

ABSTRACT:
A high voltage integrated circuit is provided which includes a first conductivity type semiconductor substrate, a first conductivity type isolation region that extends continuously from the first conductivity type semiconductor substrate, a substrate electrode formed on a surface of the first conductivity type isolation region, a second conductivity type island-like region that is formed on the first conductivity type semiconductor substrate, such that the entire periphery of the island-like region is surrounded by the first conductity type isolation region, and a plurality of high voltage MOSFETs that are connected to a common power source and operate independently of each other.

REFERENCES:
patent: 5051612 (1991-09-01), Agiman
patent: 5128729 (1992-07-01), Alonas et al.
patent: 5777362 (1998-07-01), Pearce

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