High-voltage generator for word lines of a bank-activated semico

Details High-voltage generator for word lines of a bank-activated semico High-voltage generator for word lines of a bank-activated semico

1998-12-23

2000-03-14

Tran, Andrew Q.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518911, 36523003, 365226, 327536, 327537, G11C 700

Patent

active

060381787

ABSTRACT:
A semiconductor memory device operates at a high speed by applying high-voltage used for driving word lines in accordance with an activated state of a bank by using a high-voltage circuit controlled for each bank or by inserting control circuits in each output stage of the high-voltage circuit in the memory device adopting a number of banks. The memory device includes a high-voltage generation circuit that includes a number of unit high-voltage generation circuits that output a high-voltage of the same level, and a multi-bank circuit that includes a number of unit bank circuits driven independently in response to the high-voltage signal of a corresponding unit high-voltage generation circuit, a corresponding row decoder output signal and a corresponding column decoder output signal.

REFERENCES:
patent: 5404330 (1995-04-01), Lee et al.

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