High voltage generating circuit for a semiconductor memory devic

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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G05F 110, G05F 302

Patent

active

059822228

ABSTRACT:
A high voltage generating circuit for a semiconductor memory device includes a plurality of charge pumps which are connected to a common output line and repetatively activated in sequence. Each pump operates for a predetermined on time after it is activated. In standby mode, the pumps are activated at a low frequency so that the amount of time between the activation of successive pumps is longer than the predetermined on time, and thus, each pump is deactivated before the next pump is activated. This results in only a small amount of charge being transferred to the output line during standby mode. In active mode, the pumps are activated at a higher frequency such that the on times of the individual pumps overlap and several pumps operate simultaneously. Thus, a larger amount of charge is transferred during active mode. Since the individual pumps are activated at different times, power supply noise is reduced.

REFERENCES:
patent: 5381051 (1995-01-01), Morton
patent: 5426333 (1995-06-01), Maeda
patent: 5561385 (1996-10-01), Choi
patent: 5642073 (1997-06-01), Manning
patent: 5781494 (1998-07-01), Bae et al.

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