High voltage gate driver integrated circuit including high...

Details High voltage gate driver integrated circuit including high... High voltage gate driver integrated circuit including high...

2007-12-18

2007-12-18

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257SE29027

Reexamination Certificate

active

11114693

ABSTRACT:
There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

REFERENCES:
patent: 5275961 (1994-01-01), Smayling et al.
patent: 5859456 (1999-01-01), Efland et al.
patent: 6242787 (2001-06-01), Nakayama et al.
patent: 2002/0005550 (2002-01-01), Takahashi et al.

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