Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-06-28
2011-06-28
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S167000, C438S194000, C438S047000, C257S194000
Reexamination Certificate
active
07968391
ABSTRACT:
A high voltage and high power gallium nitride (GaN) transistor structure is disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited on a substrate. A GaN termination layer is deposited on the plurality of structural epitaxial layers. The GaN termination layer is adapted to protect the plurality of structural epitaxial layers from surface reactions. The GaN termination layer is sufficiently thin to allow electrons to tunnel through the GaN termination layer. Electrical contacts are deposited on the GaN termination layer, thereby forming a high electron mobility transistor.
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Gibb Shawn
Grider David
Hosse Brook
Shealy Jeffrey B.
Smart Joseph
Doan Theresa T
RF Micro Devices, Inc.
Withrow & Terranova, P.L.L.C.
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