High-voltage five-transistor static random access memory cell

Details High-voltage five-transistor static random access memory cell High-voltage five-transistor static random access memory cell

1993-06-15

1994-05-24

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 36518911, G11C 1140

Patent

active

053155459

ABSTRACT:
According to a first aspect of the present invention, a static random access memory cell according to the present invention includes two stages. The first stage has a first P-Channel MOS transistor with its source connected to a high-voltage supply rail, and its drain connected to the drain of a first N-Channel MOS transistor. The source of the first N-Channel MOS transistor is connected to the drain of a second N-Channel MOS transistor. The source of the second N-Channel MOS transistor is connected to a V.sub.SS power supply rail. The second stage has a second P-Channel MOS transistor with its source connected to the high-voltage supply rail V.sub.HS, and its drain connected to the drain of a third N-Channel MOS transistor. The source of the third N-Channel MOS transistor is connected to the drain of a fourth N-Channel MOS transistor. The source of the fourth N-Channel MOS transistor is connected to V.sub.SS. The gates of the first and second P-Channel MOS transistors are cross-coupled and the gates of the second and fourth N-Channel MOS transistors are cross-coupled. The gates of the first and third N-Channel MOS transistors are connected together to power supply rail V.sub.DD, usually 5 volts. The first and second P-Channel MOS transistors are formed in an n-well biased at a constant power supply voltage. In a preferred embodiment the constant power supply voltage may be V.sub.HS. A bit line coupled to the drain of the second N-Channel MOS transistor through a fifth N-Channel MOS transistor, having its gate connected to a word line.

REFERENCES:
patent: 4287574 (1981-09-01), Uchida
patent: 4403306 (1983-09-01), Tokushige et al.
patent: 4536859 (1985-08-01), Kamuro
patent: 4541073 (1985-09-01), Brice et al.
patent: 4779226 (1988-10-01), Haraszti
patent: 4816706 (1989-03-01), Dhong et al.
patent: 5111429 (1992-05-01), Whitaker

Affiliated with

Also associated with

Rating

High-voltage five-transistor static random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-voltage five-transistor static random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage five-transistor static random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1978397