Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-27
2007-11-27
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S401000, C257SE29130
Reexamination Certificate
active
11689313
ABSTRACT:
Methods and apparatus are provided for a MOSFET (50, 99, 199) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) (70) and drain (D) (76) are spaced apart by a channel (90) underlying a gate (84) and one or more carrier drift spaces (92, 92′) serially located between the channel (90) and the source (70, 70′) or drain (76, 76′). A buried region (96, 96′) of the same conductivity type as the drift space (92, 92′) and the source (70, 70′) or drain (76, 76′) is provided below the drift space (92, 92′), separated therefrom in depth by a narrow gap (94, 94′) and ohmically coupled to the source (70, 70′) or drain (76, 76′). Current flow (110) through the drift space produces a potential difference (Vt) across this gap (94, 94′). As the S-D voltage (Vo) and current (109, Io) increase, this difference (Vt) induces high field conduction between the drift space (92, 92′) and the buried region (96, 96′) and diverts part (112, It) of the S-D current (109, Io) through the buried region (96, 96′) and away from the near surface portions of the drift space (92, 92′) where breakdown generally occurs. Thus, BVdss is increased.
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Defresart Edouard D.
Desouza Richard J.
Lin Xin
Morrison Jennifer H.
Parris Patrice M.
Freescale Semiconductor Inc.
Pham Hoai
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