High-voltage extended drain MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21417

Reexamination Certificate

active

07812393

ABSTRACT:
All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

REFERENCES:
patent: 4345265 (1982-08-01), Blanchard
patent: 4411058 (1983-10-01), Chen
patent: 5055417 (1991-10-01), Akcasu
patent: 5204545 (1993-04-01), Terashima
patent: 5218228 (1993-06-01), Williams et al.
patent: 5293060 (1994-03-01), Komori et al.
patent: 5304827 (1994-04-01), Malhi et al.
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5374843 (1994-12-01), Williams et al.
patent: 5426325 (1995-06-01), Chang et al.
patent: 5478759 (1995-12-01), Mametani et al.
patent: 5485027 (1996-01-01), Williams et al.
patent: 5521105 (1996-05-01), Hsu et al.
patent: 5541439 (1996-07-01), Mojaradi et al.
patent: 5578508 (1996-11-01), Baba et al.
patent: 5585294 (1996-12-01), Smayling et al.
patent: 5640497 (1997-06-01), Woolbright
patent: 5696010 (1997-12-01), Malhi
patent: 5698458 (1997-12-01), Hsue et al.
patent: 5714396 (1998-02-01), Robb et al.
patent: 5751054 (1998-05-01), Yilmaz et al.
patent: 5777362 (1998-07-01), Pearce
patent: 5817546 (1998-10-01), Ferla et al.
patent: 5909103 (1999-06-01), Williams
patent: 5966599 (1999-10-01), Walker et al.
patent: 5973367 (1999-10-01), Williams
patent: 5998837 (1999-12-01), Williams
patent: 6063678 (2000-05-01), D'Anna
patent: 6072215 (2000-06-01), Kawaji et al.
patent: 6072216 (2000-06-01), Williams et al.
patent: 6096625 (2000-08-01), Daniel et al.
patent: 6097063 (2000-08-01), Fujihira
patent: 6207484 (2001-03-01), Kim et al.
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 6255154 (2001-07-01), Akaishi et al.
patent: 6271552 (2001-08-01), D'Anna
patent: 6274898 (2001-08-01), Mehta et al.
patent: 6278162 (2001-08-01), Lien et al.
patent: 6294818 (2001-09-01), Fujihira
patent: 6362025 (2002-03-01), Patti et al.
patent: 6392275 (2002-05-01), Jang
patent: 6429481 (2002-08-01), Mo et al.
patent: 6468847 (2002-10-01), Disney
patent: 6472709 (2002-10-01), Blanchard
patent: 6476457 (2002-11-01), Oh
patent: 6566709 (2003-05-01), Fujihira
patent: 6686627 (2004-02-01), D'Anna et al.
patent: 6720615 (2004-04-01), Fujihira
patent: 6734714 (2004-05-01), Disney
patent: 6765771 (2004-07-01), Ker et al.
patent: 6835627 (2004-12-01), Whisten et al.
patent: 6855985 (2005-02-01), Williams et al.
patent: 7061057 (2006-06-01), Babcock et al.
patent: 7091557 (2006-08-01), Deboy
patent: 7126166 (2006-10-01), Nair et al.
patent: 2001/0000288 (2001-04-01), Oh
patent: 2001/0015459 (2001-08-01), Watanabe et al.
patent: 2003/0030112 (2003-02-01), Wada et al.
patent: 2004/0217377 (2004-11-01), Deboy
patent: 2005/0042815 (2005-02-01), Williams et al.
patent: 2007/0278568 (2007-12-01), Williams et al.
patent: 2008/0061367 (2008-03-01), Williams et al.
patent: 2008/0061368 (2008-03-01), Williams et al.
patent: 2008/0061400 (2008-03-01), Williams et al.
patent: 2008/0067585 (2008-03-01), Williams et al.
patent: 2008/0067588 (2008-03-01), Williams et al.

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