Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-31
1999-06-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257500, 257531, 257539, 257547, 257577, 257546, H01L 2362
Patent
active
059124954
ABSTRACT:
The invention relates to a structure for and the method of manufacturing a driver circuit for an inductive load monolithically integrated on a semiconductor substrate doped with a first type of doping agent and on which is grown an epitaxial well having a second type of doping agent. An insulated well doped with the same type of doping agent as the substrate, which houses at least one power transistor of the driver circuit, is provided within the epitaxial well. The epitaxial well also houses a first and a second active area which house the cathode terminal and anode terminal of a protection diode, respectively.
REFERENCES:
patent: 4054828 (1977-10-01), Conzelmann et al.
patent: 4250829 (1981-02-01), Stephens, Jr.
patent: 4496849 (1985-01-01), Kotowski
patent: 4847603 (1989-07-01), Blanchard
patent: 4882532 (1989-11-01), Gariboldi et al.
patent: 4928157 (1990-05-01), Matsunaga et al.
patent: 5347419 (1994-09-01), Caron et al.
patent: 5397914 (1995-03-01), Suda et al.
patent: 5495123 (1996-02-01), Canclini
patent: 5751052 (1998-05-01), Heminger et al.
Depetro Riccardo
Novelli Aldo
Carlson David V.
Mintel William
SGS-Thomson Microelectronics S.R.L.
LandOfFree
High voltage driver circuit with diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage driver circuit with diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage driver circuit with diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-404307