Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257S344000, C438S197000, C438S306000
Reexamination Certificate
active
07091556
ABSTRACT:
The present invention provides, in one embodiment, a transistor (100). The transistor (100) comprises a doped semiconductor substrate (105) and a drain-extended well (115) having a curved region (125) and a straight region (130) surrounded by the doped semiconductor substrate (105). The drain-extended well (115) has an opposite dopant type as the doped semiconductor substrate (105). The transistor (100) further includes a centered source/drain (120) surrounded by the drain-extended well (115) and separated from an outer perimeter (135) of the drain-extended well (115). A separation in the curved region (145) is greater than a separation in the straight region (150). Other embodiments of the present invention include an integrated circuit (300) and a method of manufacturing a transistor (200).
REFERENCES:
patent: 4926233 (1990-05-01), Hutter
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 6451640 (2002-09-01), Ichikawa
patent: 6486512 (2002-11-01), Jeon et al.
patent: 6593621 (2003-07-01), Tsuchiko et al.
patent: 6798020 (2004-09-01), Disney et al.
Jeffrey Smith, et al.; “A O.7um Linear BiCMOS/DMOS Technology for Mixed-Signal/Power Applications”; 1997 IEEE; pp. 155-157.
Edwards Henry Litzmann
Pendharker Sameer
Brady III W. James
Keagy Rose Alyssa
Quach T. N.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
High voltage drain-extended transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage drain-extended transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage drain-extended transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3656183