High voltage dielectrically isolated remote gate solid-state swi

Details High voltage dielectrically isolated remote gate solid-state swi High voltage dielectrically isolated remote gate solid-state swi

1981-03-27

1986-05-06

Wojciechowicz, Edward J.

357 21, 357 22, 357 39, 357 41, 357 49, H01L 2972

Patent

active

045875456

ABSTRACT:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end. An n+ type gate region exists in a portion of the semiconductor body other than the portion which directly separates the anode and cathode regions. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.

REFERENCES:
patent: 4060821 (1977-11-01), Houston

Affiliated with

Also associated with

Rating

High voltage dielectrically isolated remote gate solid-state swi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage dielectrically isolated remote gate solid-state swi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage dielectrically isolated remote gate solid-state swi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1577662