Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Gebremariam, Samuel A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257SE29256, C257SE29118
Reexamination Certificate
active
07968938
ABSTRACT:
The present invention provides a vertical tapered dielectric high-voltage device (10) in which the device drift region is depicted by action of MOS field plates (30) formed in vertical trenches. The high-voltage device comprises: a substrate (32); a silicon mesa (20) formed on the substrate and having a stripe geometry, wherein the silicon mesa provides a drift region having a constant doping profile; a recessed gate (22) and source (SN) formed on the silicon mesa; a trench (26) adjacent each side of the silicon mesa; and a metal-dielectric field plate structure (12) formed in each trench; wherein each metal-dielectric field plate structure comprises a dielectric (28) and a metal field plate (30) formed over the dielectric, and wherein a thickness of the dielectric increases linearly through a depth of the trench to provide a constant longitudinal electric field.
REFERENCES:
patent: 6133591 (2000-10-01), Letavic et al.
patent: 6191447 (2001-02-01), Baliga
patent: 6191453 (2001-02-01), Petruzzello et al.
patent: 6310378 (2001-10-01), Letavic et al.
patent: 2002/0056883 (2002-05-01), Baliga
patent: 2002/0056884 (2002-05-01), Baliga
patent: 2005/0133858 (2005-06-01), Banerjee et al.
Letavic Theodore
Petruzzello John
Gebremariam Samuel A
NXP B.V.
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