High voltage device

Details High voltage device High voltage device

2005-12-16

2010-10-05

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257SE29278

Reexamination Certificate

active

07808037

ABSTRACT:
A high-voltage semiconductor device includes a silicon substrate having a main surface, a gate on the main surface of the silicon substrate, a source region in a portion of the silicon substrate proximate the main surface and a drain region in a portion of the silicon substrate proximate the main surface. The drain region is spaced apart from the source region. A channel region is defined in a portion of the silicon substrate proximate the main surface between the source region and the drain region. The channel region is at least partially beneath the gate. An additional region is disposed on the main surface proximate the channel region. The additional region being formed of one of a high-k material and a conductive material.

REFERENCES:
patent: 4912061 (1990-03-01), Nasr
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5430313 (1995-07-01), Kumagai et al.
patent: 5478759 (1995-12-01), Mametani et al.
patent: 5719425 (1998-02-01), Akram et al.
patent: 6350641 (2002-02-01), Yang
patent: 6551870 (2003-04-01), Ling et al.
patent: 6593197 (2003-07-01), Wieczorek et al.
patent: 6624028 (2003-09-01), Wen
patent: 6831337 (2004-12-01), Wu et al.
patent: 2003/0038308 (2003-02-01), Kim
patent: 2003/0116785 (2003-06-01), D'Anna et al.
patent: 2003/0228721 (2003-12-01), Efland et al.
patent: 2004/0173867 (2004-09-01), Beigel
patent: 512440 (2002-12-01), None
patent: I302719 (2007-05-01), None
Wiley Encyclopedia of Electrical and Electronics Engineering, “Hot Carriers” article by Timothy A. Grotjohn (copyright 1999), pp. 1-24.

Affiliated with

Also associated with

Rating

High voltage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4176807