Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-04
2009-10-06
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21642
Reexamination Certificate
active
07598551
ABSTRACT:
The invention is directed to a method for manufacturing a high voltage device. The method includes steps of providing a substrate and then forming a first doped region having a first conductive type in the substrate. At least two second doped regions having a second conductive type are formed in the substrate. The second doped regions are located adjacent to both sides of the first doped region respectively, and the first doped region is separated from the second doped regions with an isolation region. A gate structure is formed on the substrate between the second doped regions and a source/drain region having the second doped region is formed in the substrate adjacent to both sides of the gate structure.
REFERENCES:
patent: 6096610 (2000-08-01), Alavi et al.
patent: 6420769 (2002-07-01), Patelmo et al.
patent: 6451655 (2002-09-01), Leonardi
Jianq Chyun IP Office
Menz Douglas M
United Microelectronics Corp.
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