High voltage device

Details High voltage device High voltage device

1998-05-27

2000-03-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257349, 257374, 257394, 257401, H01L 2972

Patent

active

060406011

ABSTRACT:
A high voltage device. A first-type semiconductor substrate having at least a gate formed thereon is provided. The high voltage comprises a second-type first diffusion region in the semiconductor region, a second-type second diffusion region within the first diffusion region, a second-type third diffusion region under the second diffusion region, a field oxide layer on a part of the second diffusion region, and a first-type source/drain region under a surface between the field oxide layer and the gate.

REFERENCES:
patent: 5714781 (1998-02-01), Yamamoto et al.

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