Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-12
1997-06-17
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257358, 257360, 361 90, 361 91, H01L 2362
Patent
active
056400365
ABSTRACT:
The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.
REFERENCES:
patent: 4271445 (1981-06-01), Hartman et al.
patent: 4573163 (1986-02-01), Henze et al.
patent: 4750078 (1988-06-01), Ganger et al.
patent: 4855892 (1989-08-01), Lower
patent: 4929884 (1990-05-01), Bird et al.
patent: 5047698 (1991-09-01), Fernsler et al.
patent: 5276358 (1994-01-01), Merrill et al.
Robert Bolestad et al. Electronic Devices and Circuit Theory, 3rd edition, 1982.
Hong Taek Ki
Kim Se Jeong
Koh Jae Wan
Lee Woo Bong
Yeo Tae Jung
Abraham Fetsum
Fahmy Wael
Hyundai Electronics Industries Co,. Ltd.
LandOfFree
High voltage cut-off semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage cut-off semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage cut-off semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2160021