Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-05-12
2000-10-17
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257333, 257389, 257900, H01L 21265
Patent
active
061336068
ABSTRACT:
A structure of high voltage semiconductor devices having N-well 1 and N-well 2 formed with two different doping densities acting as a gradient doping of a drift region. This structure results in a lift in its current drive capability and as well as in its breakdown voltage. The structure further comprises a buried spacer oxide, serving as a point of exertion for the edges of the buried gate electrode. And finally, since the gate electrode is formed by a trenching method, not only is the channel length increased with the placement of both the channel and drift regions changes in the to vertical direction, all of those contribute to a great reduction in the occupied chip area.
REFERENCES:
patent: 4830975 (1989-05-01), Bovaird et al.
patent: 5559357 (1996-09-01), Krivokapic
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5888880 (1999-03-01), Gardner et al.
patent: 5937297 (1999-08-01), Peidous
patent: 5962894 (1999-10-01), Gardner et al.
patent: 5972754 (1999-10-01), Ni et al.
Monin, Jr. Donald L.
United Microelectronics Corp.
LandOfFree
High voltage complementary semiconductor device (HV-CMOS) with g does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage complementary semiconductor device (HV-CMOS) with g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage complementary semiconductor device (HV-CMOS) with g will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-471777