High voltage CMOS device to integrate low voltage controlling de

Details High voltage CMOS device to integrate low voltage controlling de High voltage CMOS device to integrate low voltage controlling de

1993-12-08

1995-01-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257373, 257395, 257506, 257545, 437 34, 437 40, 437 63, 437 74, 437913, H01L 2702, H01L 21265

Patent

active

053828208

ABSTRACT:
A method of fabrication of an semiconductor device comprises applying an impurity of a predetermined polarity to a silicon substrate; forming a well by applying an impurity of an opposite polarity to a region in the silicon substrate; forming a first masking layer on the surface of the substrate; providing openings in the masking layer and implanting dopant ions of a first polarity into the surface of the substrate in a set of first regions selected in the substrate and the well forming a second masking layer on the surface of the substrate; implanting dopant ions of a second polarity through a second mask in other regions selected in the well and the substrate; removal of the second masking layer; formation of field oxide structures over the first and second regions; forming gate oxide layers above the exposed portions of the first and second central regions; and formation of conductive gate structures over the gate oxide layers.

REFERENCES:
patent: 5008722 (1991-04-01), Esquivel
patent: 5128739 (1992-07-01), Shirato
Z. Parpia et al, "A Novel CMOS Compatible High Voltage Transistor Structure" IEEE Trans Electron Devices, vol. ED-33, pp. 1948-1952 (Dec. 1986) (reprint pp. 116-120).
R. Jayaraman et al, "Comparison of High Voltage Devices for Power Integrated Circuits," pp. IEDM 84 258-261 (1984).

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