Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257SE21646
Reexamination Certificate
active
07071507
ABSTRACT:
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
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U.S. Appl. No. 10/143,557 Hyde et al., (assignee Impinj), filed May 9, 2002.
Bernard Frederic J.
Diorio Christopher J.
Flynn Nathan J.
Impinj, Inc.
Merchant & Gould P.C.
Wilson Scott R
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