High voltage BICMOS device and method for manufacturing the...

Details High voltage BICMOS device and method for manufacturing the... High voltage BICMOS device and method for manufacturing the...

2011-07-12

2011-07-12

Tsai, H. Jey (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S374000, C257S375000, C257SE27046

Reexamination Certificate

active

07977753

ABSTRACT:
A high voltage BICMOS device and a method for manufacturing the same, which may improve the reliability of the device by securing a distance between adjacent DUF regions, are provided. The high voltage BICMOS device includes: a reverse diffusion under field (DUF) region formed by patterning a predetermined region of a semiconductor substrate; a diffusion under field (DUF) region formed in the substrate adjacent to the reverse DUF region; a spacer formed at a sidewall of the reverse DUF region; an epitaxial layer formed on an entire surface of the substrate; and a well region formed in contact with the DUF region.

REFERENCES:
patent: 4290831 (1981-09-01), Ports et al.
patent: 4624047 (1986-11-01), Tani
patent: 4979010 (1990-12-01), Brighton
patent: 6828649 (2004-12-01), Desko et al.

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