High trigger current silicon controlled rectifier

Details High trigger current silicon controlled rectifier High trigger current silicon controlled rectifier

2011-07-26

2011-07-26

Patel, Dharti H (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S118000

Reexamination Certificate

active

07986502

ABSTRACT:
An ESD protection circuit including an SCR having at least a PNP transistor and at least a NPN transistor such that said PNP transistor is coupled to an anode and the NPN transistor is coupled to a cathode. The circuit also includes a first resistor coupled between the anode and the base of the pnp transistor and a second resistor coupled between the cathode and the base of the npn transistor. A parasitic distributed bipolar transistor is formed between said first and second transistor to control triggering of the SCR.

REFERENCES:
patent: 6803633 (2004-10-01), Mergens et al.

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