Semiconductor integrated circuit device

Oscillators – Solid state active element oscillator – Transistors

Reexamination Certificate

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C331S1170FE, C257S401000

Reexamination Certificate

active

07928809

ABSTRACT:
A semiconductor integrated circuit device includes a plurality of first gates each of which has a first protrusion section protruding from a first active region; a plurality of second gates each of which has a second protrusion section protruding from a second active region adjacent to the first active region in a direction opposite to a protruding direction of the first protrusion section; a second common interconnect which is formed on the first protrusion section of the plurality of first gates and on all drains of the second active region and connects the plurality of first gates and all drains of the second active region; and a third common interconnect which is formed on the second protrusion section of the plurality of second gates and on all drains of the first active region and connects the plurality of second gates and all drains of the first active region.

REFERENCES:
patent: 7327201 (2008-02-01), Miyashita et al.
patent: 7741922 (2010-06-01), Lee et al.
patent: 2004/0140511 (2004-07-01), Nakatani et al.
patent: 2008/0157222 (2008-07-01), Wang
patent: 5-300011 (1993-11-01), None

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